技术参数
| 测量模式 | 反射率 |
| 测量时间 | < 10 秒(典型值) |
| 波长范围 | VNIR:400–1,000 nm | SWIR 1:900–1,700 nm |
| 光谱分辨率 | VNIR:1.34 nm | SWIR:3.5 nm |
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The PVA TePla VEpioneer MICRO is a specialized metrology system designed for precise inspection tasks within semiconductor equipment environments.
A PVA TePla metrology unit designed for semiconductor equipment analysis, showing a scanning sensor positioned over a wafer stage.
This PVA TePla system is designed for semiconductor metrology, featuring a glass chamber that houses a wafer for precise inspection.
| 测量模式 | 反射率 |
| 测量时间 | < 10 秒(典型值) |
| 波长范围 | VNIR:400–1,000 nm | SWIR 1:900–1,700 nm |
| 光谱分辨率 | VNIR:1.34 nm | SWIR:3.5 nm |
对 VEpioneer 感兴趣吗?